Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-02-23
2008-09-23
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S736000, C438S742000, C438S735000, C438S754000, C257SE21459, C257SE21440
Reexamination Certificate
active
07427569
ABSTRACT:
A metal etching process is described. A substrate having a dielectric layer thereon is provided. An aluminum-copper alloy layer is formed on the dielectric layer. A hard mask layer is formed on the aluminum-copper alloy layer. A patterned photoresist layer is formed on the hard mask layer and then the hard mask layer is patterned. A thermal treatment process is performed. The thermal treatment process is carried out at a temperature of more than 300° C. for a period of at least 3 minutes. Thereafter, the aluminum-copper alloy layer is etched using the patterned hard mask layer as an etching mask. Due to the thermal treatment, the metal precipitate (CuAl2) within the aluminum-copper alloy layer is eliminated and hence the metal etching process is improved.
REFERENCES:
patent: 4451326 (1984-05-01), Gwozdz
patent: 4689113 (1987-08-01), Balasubramanyam et al.
patent: 4778739 (1988-10-01), Protschka
patent: 6071824 (2000-06-01), Singh et al.
patent: 6117345 (2000-09-01), Liu et al.
patent: 6358830 (2002-03-01), Morozumi
patent: 6395644 (2002-05-01), Hopper et al.
patent: 6455431 (2002-09-01), Hsieh et al.
Article titled “Segregation of Cu to Grain Boundaries by Aging Treatment and its Effect on EM Resistance for AlCu/TiN Lines” jointly by authored by Takenao Nemoto et ul., LSI Research Center, Kawasaki Steel Corp., copyright 1994 IEEE/IRPS. pp. 207-212.
Huang Jin-Yang
Liao Hung-Kwei
Tung Ming-Sheng
Wang Tza-Hao
Jianq Chyun IP Office
Lebentritt Michael S
ProMOS Technologies Inc.
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