Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1992-09-15
1993-11-23
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 17, 257 22, 257 27, 257774, 257771, H01L 2902
Patent
active
052647110
ABSTRACT:
A polar semiconductor quantum wire for use in electronic and opto-electronic devices. The polar semiconductor quantum wire is either completely or partially encapsulated in metal to reduce the strength of the scattering potential associated with interface optical phonons normally established at the lateral boundaries of polar semiconductor quantum wires. Metal alone or metal employed in conjunction with modulation doping enhances the transport of charge carriers within the polar semiconductor quantum wire.
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Dutta Mitra
Grubin Harold L.
Iafrate Gerald J.
Kim Ki Wook
Stroscio Michael A.
Anderson William H.
Mintel William
The United States of America as represented by the Secretary of
Zelenka Michael
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