Metal dry etch using electronic field

Details Metal dry etch using electronic field Metal dry etch using electronic field

2005-01-18

2005-01-18

Goudreau, George A. (Department: 1763)

Chemistry: electrical and wave energy

Apparatus

Electrolytic

C156S345110, C156S345390, C156S345400

Reexamination Certificate

active

06843893

ABSTRACT:
A method and structure for an apparatus for removing metal from an integrated circuit structure is disclosed. A container holds an integrated circuit structure that has a metal portion. An electronic device connected to the container produces an electronic field proximate to a limited region of the metal portion. A first supply connected to the container supplies an oxidizing agent within the container. A solvent supply connected to the container supplies solvent to the limited region of the metal portion.

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“Selective Area Oxidation of Silicon With Scanning Force Microscope”, Day et. al.; Applied Physics Letters (1993); 62 (21) pp. 2691-2693.*
“Nanometer Lithography On Silicon and Hydrogenated Amorphous Silicon With Low-Energy Electrons”; Kramer et al.; Microelectronic Engineering (1995); 27 (1-4); pp. 47-50.

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