Metal-dielectric electron beam scanning stack

Metal working – Barrier layer or semiconductor device making – Barrier layer device making

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29 2513, H01J 902

Patent

active

041352815

ABSTRACT:
A metal-dielectric electron beam scanning stack and method for making the same is disclosed. The electron beam scanning stack subassembly is fabricated from at least a pair of metal plates, each having a plurality of apertures defined therein. Individual apertures are aligned with corresponding apertures of the other plate to form a plurality of electron beam channels. These plates are electrically isolated from and bonded to each other by a layer of dielectric material without the use of a spacer plate. By etching isolation channels in each of these plates in a selected pattern, control plates are fabricated having a plurality of isolated conductive portions arranged in selected patterns. These subassemblies are bonded together using either dielectric material or dielectrically coated metal spacer plates having a plurality of corresponding aligned apertures. Contact leads from the plurality of isolated conductive portions are isolation etched into the inactive peripheral area of the plate. These leads extend along the periphery of the plate where they terminate in the form of multiple contact means protruding from the edge of the plate.

REFERENCES:
patent: 2646521 (1953-07-01), Rajchman
patent: 3458745 (1969-07-01), Shoulders
patent: 3680184 (1972-08-01), Greene
patent: 3922577 (1975-11-01), Orthuber
patent: 3936697 (1976-02-01), Scott

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