Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Patent
1976-12-02
1979-07-10
Lazarus, Richard B.
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
29 2513, 156309, H01J 902
Patent
active
041603109
ABSTRACT:
A metal-dielectric electron beam scanning stack and method for making the same is disclosed. The electron beam scanning stack subassembly is fabricated from a series of metal plates, each having a plurality of apertures defined therein at least one plate comprising a spacer plate. Individual apertures are aligned with corresponding apertures of all other plates to form a plurality of electron beam channels. These plates are electrically isolated from and bonded together by spacer plates coated with dielectric material. By etching isolation channels in a selected pattern in these plates, control plates are fabricated having a plurality of isolated conductive portions arranged in selected patterns. Subassemblies are bonded together using either dielectric material or dielectrically coated metal spacer plates having a plurality of correspondingly aligned apertures. Contact leads from the plurality of isolated conductive portions are isolation etched into the inactive peripheral area of the plate. These leads extend along the periphery of the plate where they terminate in the form of multiple contact means protruding from the edge of the plate.
REFERENCES:
patent: 2646521 (1953-07-01), Rajchman
patent: 3458745 (1969-07-01), Shoulders
patent: 3680184 (1972-08-01), Greene
patent: 3922577 (1975-11-01), Orthuber
patent: 3936697 (1976-02-01), Scott
Comfort James T.
Grossman Rene E.
Honeycutt Gary C.
Lazarus Richard B.
Texas Instruments Incorporated
LandOfFree
Metal-dielectric electron beam scanning stack does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Metal-dielectric electron beam scanning stack, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal-dielectric electron beam scanning stack will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-735339