Metal deposition

Fishing – trapping – and vermin destroying

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437126, 427124, 156610, 156613, H01L 2120, B05D 512

Patent

active

052328694

ABSTRACT:
In the deposition of metal on solid substrates by a Metal Organic Chemical Deposition process, an improvement comprises the provision of vapors of a precursor of the metal by passing an inert carrier gas through a mixture of the metal precursor and a liquid having a vapor pressure at ambient temperature lower than that of the metal precursor and in which the metal precursor is at least partially soluble.

REFERENCES:
patent: 4066481 (1978-01-01), Manasevit et al.
patent: 4220488 (1980-09-01), Duchemin et al.
patent: 4594173 (1986-01-01), Hobgood et al.
patent: 4734999 (1988-04-01), Fujisawa et al.
"Point-of-use Arsine Generation for Organometallic Vapor-Phase Epitaxial Growth" by Salzman et al., J. Appl. Phys., pp. 1185-1189, Aug. 1, 1989.
"Organometallic Precursors in the Growth of Epitaxial Thin Films of Groups III-V Semiconductors by Metal-Organic Chemical Vapor Deposition", Zanella et al, Chem. Mater. 1991, 3, 225-242, Mar./Apr. 1991.

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