Metal-containing compound, its production method,...

Organic compounds -- part of the class 532-570 series – Organic compounds – Heavy metal containing

Reexamination Certificate

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C556S001000, C556S176000, C427S250000, C427S255190

Reexamination Certificate

active

07816549

ABSTRACT:
A compound which has thermal stability and moderate vaporizability and is satisfactory as a material for the CVD or ALD method; a process for producing the compound; a thin film formed from the compound as a raw material; and a method of forming the thin film. A compound represented by the general formula (1) is produced by reacting a compound represented by the general formula (2) with a compound represented by the general formula (3). The compound produced is used as a raw material to form a metal-containing thin film. [Chemical formula 1] (1) [Chemical formula 2] (2) [Chemical formula 3] Mp(NR4R5)q(3) (In the formulae, M represents a Group 4 element, aluminum, gallium, etc.; n is 2 or 3 according to cases; R1and R3each represents C1-6alkyl, etc.; R2represents C1-6alkyl, etc.; R4and R5each represents C1-4alkyl, etc.; X represents hydrogen, lithium, or sodium; p is 1 or 2 according to cases; and q is 4 or 6 according to cases).

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Kenney, Amanda P. et al., The Insertion of Carbodiimides into AI and Ga Amido Linkages. Guanidinates and Mixed Amino Guanidinates of Aluminum and Gallium, Inorganic Chemistry, 2005, 44 (8), pp. 2926 to 2933.
Dennis M. Hausmann et al. Chemistry of Material. Atomic Layer Deposition of Hafnium and Zirconium Oxides Using Metal Amide Precursors . Harvard University Chemical Laboratories, Cambridge, Massachusetts 02138. 2002 American Chemical Society published Sep. 21, 2002, 14, pp. 4350-4358.
Ju Youn Kim et al. Journal of the Electrochemical SocietyCharacteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes. Department of Materials Science and Engineering, Hangyang University, Seoul 133-791, Korea, 2005, 152(1), pfs. 29-34.
Anthony C. Jones et al. Some recent developments in the MOCVD and ALD of high- dielectric oxides. Journal of Materials Chemistry, 2004, 14, The Royal Society of Chemistry, pp. 3101-3112.
Chinese Office Action issued Apr. 13, 2010 in Chinese application No. 200680029033.2.

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