Metal contact structure in semiconductor device

Details Metal contact structure in semiconductor device Metal contact structure in semiconductor device

1998-09-30

2000-03-07

Dutton, Brian

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257751, 257764, 438192, 438190, H01L 23532, H01L 2188

Patent

active

060344350

ABSTRACT:
A structure of metal contact portion of a semiconductor device, includes a semiconductor substrate having an impurity doped junction therein, an insulating layer pattern formed on the semiconductor substrate having a contact hole through the insulating layer pattern to expose the doped junction, a conductive projection formed directly on a portion of the doped junction, and a metal layer formed on opposite sides of the conductive projection and contacting the doped junction and the conductive projection, whereby a contact area for the doped junction is increased.

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