Metal contact structure for solar cell and method of...

Batteries: thermoelectric and photoelectric – Photoelectric – Cells

Reexamination Certificate

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C136S261000, C438S098000, C205S123000, C205S157000

Reexamination Certificate

active

07388147

ABSTRACT:
In a solar cell having p doped regions and n doped regions alternately formed in a surface of a semiconductor wafer in offset levels through use of masking and etching techniques, metal contacts are made to the p regions and n regions by first forming a base layer contacting the p doped regions and n doped regions which functions as an antireflection layer, and then forming a barrier layer, such as titanium tungsten or chromium, and a conductive layer such as copper over the barrier layer. Preferably the conductive layer is a plating layer and the thickness thereof can be increased by plating.

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