Metal casing for semiconductor device having high thermal conduc

Details Metal casing for semiconductor device having high thermal conduc Metal casing for semiconductor device having high thermal conduc

1994-09-16

1996-11-12

Jordan, Charles T.

Powder metallurgy processes

Powder metallurgy processes with heating or sintering

Making porous product

419 5, 419 23, 419 27, 419 30, 419 36, 419 37, 419 38, 419 65, B22F 316

Patent

active

055749593

ABSTRACT:
A metal casing for a semiconductor device is manufactured by a powder metallurgy injection molding process which uses infiltration. The metal casing includes a base member and an enclosure member arranged on the base member. The base member and the enclosure member are formed of an alloy including 20 to 50 percent by volume of copper, equal to or less than 1 percent by weight of nickel and remainder of tungsten or molybdenum. The metal casing is manufactured as a net-shape product by a process which includes the steps of mixing tungsten powder and nickel powder having average particles sizes equal to or less than 40 .mu.m so as to form mixed metal powder, kneading the mixed metal powder with an organic binder so as to form an admixture, injection molding said admixture so as to form a predetermined green shape, debinderizing said green shape, applying surface powder to at least one surface of the green shape so as to prevent effusion of copper during infiltration and infiltrating copper into the green shape so as to produce a net-shape product.

REFERENCES:
patent: 3929476 (1975-12-01), Kirby, Jr. et al.
patent: 4327156 (1982-04-01), Dillon et al.
patent: 4373127 (1983-02-01), Haskett et al.
patent: 4431449 (1984-02-01), Dillon et al.
patent: 4491558 (1985-01-01), Gardner
patent: 4554218 (1985-11-01), Gardner et al.
patent: 4710223 (1987-12-01), Matejczyk
patent: 5017526 (1991-05-01), Newkirk et al.
patent: 5086333 (1992-02-01), Osada et al.
patent: 5099310 (1992-03-01), Osada et al.
patent: 5167697 (1992-12-01), Koumura et al.
Patent Abstracts of Japan, vol. 8, No. 272 (E-284), Dec. 13, 1984.

Affiliated with

Also associated with

Rating

Metal casing for semiconductor device having high thermal conduc does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Metal casing for semiconductor device having high thermal conduc, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal casing for semiconductor device having high thermal conduc will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-573495