Metal carboxylate complexes for formation of metal-containing fi

Organic compounds -- part of the class 532-570 series – Organic compounds – Heavy metal containing

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C07F 1500

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057636338

ABSTRACT:
A method of forming a metal-containing film on a substrate, such as a semiconductor wafer. The method involves depositing a Group VIII metal carboxylate complex on the substrate, wherein the Group VIII metal is selected from the group consisting of Ru, Os, Rh, Ir, Pd, and Pt, and thermally decomposing the Group VIII metal carboxylate complex to form the metal-containing film.

REFERENCES:
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Haszeldine et al., "Organic Reactions Involving Transition Metals. Part IV. Carboxylatodiene Complexes of Rhodium(.vertline.) and Iridium(.vertline.)," J. Chem. Soc., (A), 3696-3698 (1971).
Haworth et al., "Soaps of Some Transition Metal Complexes," Synth. React. Inorg. Met.-Org. Chem., 19(8), 871-880 (1989).
Hoke et al., "Low-temperature Vapour Deposition of High-purity Iridium Coatings from Cyclooctadiene Complexes of Iridium," J. Mater. Chem., 1(4), 551-554 (1991).
Yuan et al., "Low-Temperature Chemical Vapor Deposition of Ruthenium Dioxide from Ruthenium Tetroxide: A Simple Approach to High-Purity RuO.sub.2 Films," Chem. Mater., 5, 908-910 (1993).

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