Metal bump type semiconductor device and method for manufacturin

Details Metal bump type semiconductor device and method for manufacturin Metal bump type semiconductor device and method for manufacturin

1991-07-17

1992-09-01

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437189, 437225, H01L 2128

Patent

active

051438658

ABSTRACT:
A semiconductor element is formed in a semiconductor substrate. An electrode wiring pattern which is connected to the active region and contains aluminum as the main component is formed on the main surface of said semiconductor substrate. A metal bump is formed on the electrode wiring pattern. The metal bump contains zinc of 1 to 10% in mass percentage in addition to at least one element selected from a group consisting of tin, lead and aluminum a second metal bump is formed having a lower melting point than that of first bump. The second bump contains lead, tin and at least one of silver and copper.

REFERENCES:
patent: 4558510 (1985-12-01), Tani et al.
patent: 4818724 (1989-04-01), Cetronio et al.
English Translation of JP 61-59548 to Fukuchi et al (before called Matsushita).
Electronics and Communications in Japan, Part 2, vol. 17, No. 10, 1988, pp. 32-38; "Direct Formation of Solder Bump on Al Pad Using Ultrasonic Soldering", Inaba et al.

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