Metal base transistor with thin film amorphous semiconductors

Details Metal base transistor with thin film amorphous semiconductors Metal base transistor with thin film amorphous semiconductors

1977-09-26

1978-11-28

Wojciechowicz, Edward J.

357 4, 357 33, 357 59, H01L 2948

Patent

active

041278615

ABSTRACT:
A transistor having a continuously variable modulation characteristic is provided by a structure of two semiconductive films with at least one of them composed of amorphous material sandwiching a thin metallic film base. The transfer characteristics of the device are continuous rather than bistable. When both semiconductive films are amorphous, the transistor can be deposited upon inexpensive crystalline or noncrystalline substrates.

REFERENCES:
patent: 4064521 (1977-12-01), Carlson

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