Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Forming lateral transistor structure
Reexamination Certificate
2009-03-20
2010-12-14
Ward, Jessica L (Department: 1793)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Forming lateral transistor structure
C438S336000, C438S326000, C438S328000
Reexamination Certificate
active
07851320
ABSTRACT:
A mesostructured aluminosilicate material is described, constituted by at least two spherical elementary particles, each of said spherical particles being constituted by a matrix based on silicon oxide and aluminum oxide, having a pore size in the range 1.5 to 30 nm, a Si/Al molar ratio of at least 1, having amorphous walls with a thickness in the range 1 to 20 nm, said spherical elementary particles having a maximum diameter of 10 μm. A process for preparing said material and its application in the fields of refining and petrochemistry are also described.
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www.dictionary.com; Random House Dictionary; “Atomize”.
www.dictionary.com; Random House Dictionary; “Aerosol”.
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Boissiere Cédric
Chaumonnot Alexandra
Coupe Aurélie
Euzen Patrick
Grosso David
IFP Energies Nouvelles
Millen White Zelano & Branigan P.C.
Saad Erin B
Ward Jessica L
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