Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1996-07-17
1999-06-29
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 14, 257 20, 257 24, H01L 310352, H01L 29775
Patent
active
059171944
ABSTRACT:
A mesoscopic structure is fabricated such that the desired dominant modes of the acoustic phonons in the structure have wavelengths such that the length of a half-integral number of wavelengths equals the length of the structure through which the desired electron wave is propagating. A manner of achieving this object is to provide for a material in a quantum wire and a material at the end of the quantum wire such that the two materials have such different properties (as disclosed hereinafter) to abruptly dampen the phonon modes at the interface between the two materials. With such an interface, a clamped boundary condition will occur and the modes of amplitude can be assumed to vanish at the interface. Such a case applies at some metal-semiconductor interfaces. In particular, for a mesoscopic device having wire-like regions which terminate on a variety of metal regions (regions used as contacts, gates, barriers, etc.), it is satisfactory to apply clamped boundary conditions. At these boundaries, the acoustic modes will have nodes instead of the anti-nodes that are established in the case of an open boundary.
REFERENCES:
patent: H1570 (1996-08-01), Lux et al.
patent: 5453627 (1995-09-01), Aihara et al.
Stroscio et al, "Phonon Modes in Quantum Wires and Quantum Dots", Journal Applied Physics, vol. 76, p. 4670 (1994).
Bannov et al, "Confined Acoustic Phonons in a Free-Standing Quantum Well," Proceedings of the 1993 International Semiconductor Device Research Symposium, p. 659, 1993.
Shi et al, "Optimal Control of Selectivity of Unimolecular Reactions via an Excited Electronic State with Designed Lasers", Journal of Chemical Physics, 97, pp. 276-287.
Leobandung et al, "Observation of Quantum Effects and Coulomb Blockage in Silicon Quantum Dot Transistors at Temperatures Over 100 Kelvin", Journal of Applied Physics,.
Stroscio et al, "Piezoelectric Scattering of Carriers in Confined Acoustic Modes in Cylindrical Quantum Wires", Physical Review B, vol. 48, pp. 1936-1939, Jul. 1993.
Macucci et al, "Simulations of Electronic Properties And Capacitance of Quantum Dots", Journal of Applied Physics, vol. 77, pp. 3267-3276.
Dutta Mitra
Iafrate Gerald J.
Kim Ki Wook
Sirenko Yuri M.
Stroscio Michael A.
Jackson, Jr. Jerome
O'Meara John M.
The United States of America as represented by the Secretary of
Zelenka Michael
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