Mesh gate V-MOS power FET

Details Mesh gate V-MOS power FET Mesh gate V-MOS power FET

1980-05-29

1983-04-05

Rosenberger, R. A.

357 55, H01L 2906

Patent

active

043793053

ABSTRACT:
A power, V-grooved MOSFET having V-grooves extending in two orthogonal dimensions, thereby forming a semi-continuous mesh grid configuration which maximizes the periphery of the MOSFET channels for a given area of silicon, thus providing higher output current and lower "on resistance" for a given area than a conventional, interdigitated V-MOS power transistor having V-grooves running in only one dimension.

REFERENCES:
patent: 4145703 (1979-03-01), Blanchard et al.
patent: 4148047 (1979-04-01), Hendrickson
patent: 4233617 (1980-11-01), Klaassen et al.
patent: 4268537 (1981-05-01), Goodman

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