MESFET with indium gallium arsenide etch stop

Details MESFET with indium gallium arsenide etch stop MESFET with indium gallium arsenide etch stop

1991-01-31

1994-02-01

Larkins, William D.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257192, 257198, 257201, H01L 29812, H01L 2973

Patent

active

052834484

ABSTRACT:
A GaAs MESFET employs an etch stop layer of Ga.sub.0.99 In.sub.0.01 As over the channel region.

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Taylor et al., "Ledistor-a three-terminal double heterostructure opoelectronic switch", Feb. 9, 1987, pp. 338-340.
Ramberg et al. "Lattice-strained heterojunction InGaAs/GaAs bipolar structure & Recombination properties and device performance". Feb. 1, 1987 pp. 1234-1236.
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