MESFET structure having a shielding region

Details MESFET structure having a shielding region MESFET structure having a shielding region

1991-03-11

1991-12-31

James, Andrew J.

357 15, 357238, 357 2314, 357 53, H01L 2948, H01L 2980, H01L 2968, H01L 2940

Patent

active

050775898

ABSTRACT:
A semiconductor device structure comprises a semiconductor substrate having a semiconductor layer of the same conductivity type formed on its first surface. A drain contact is formed on the second surface of the substrate and conductive regions having the opposite conductivity type of the substrate are formed in the semiconductor layer and are separated by a predetermined distance. Channel regions having the same conductivity type as the substrate are disposed above the conductive regions and source regions are disposed therein. A shielding region is then formed on the surface of the device structure in the area between the conductive regions. The structure allows for reduced or eliminated gate-drain capacitance, reduced output conductance and increased breakdown voltage capability.

REFERENCES:
patent: 4455565 (1984-06-01), Goodman et al.
patent: 4805003 (1989-02-01), Holm et al.
patent: 4896196 (1990-01-01), Blanchard et al.
patent: 4920388 (1990-04-01), Blanchard et al.
Sze, S. M., Semiconductor Devices-Physics and Technology, p. 200, Apr. 30, 1985.

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