MESFET mixer circuit having a pulse doped structure

Details MESFET mixer circuit having a pulse doped structure MESFET mixer circuit having a pulse doped structure

1993-03-02

1995-03-07

Callahan, Timothy P.

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Frequency or repetition rate conversion or control

257269, 257279, 257270, 327431, 327581, H03D 712

Patent

active

053961323

ABSTRACT:
An FET mixer circuit having a stable input impedance uses two tandem-connected GaAs MESFET's (1) and (2) of pulse doped structure instead of a conventional MESFET or a HEMT, as an active device. A gate biasing point for the FET (1) is set around a pinch-off point of a mutual conductance, and a gate biasing point for the FET (2) is set in a region which assures non-change of a mutual conductance with respect to the increase of a gate voltage. Thus, a mixer circuit having a good isolation characteristic for an RF signal and a local oscillation signal and exhibits substantially no change in the input impedance is attained.

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D. Demaw, "A Low-Noise Converter For 144 MC", QST Amateur Radio, vol. 51, No. 9, pp. 11-12, Newington, U.S. (1967).

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