MESFET having a termination layer in the channel layer

Details MESFET having a termination layer in the channel layer MESFET having a termination layer in the channel layer

1995-03-06

1997-12-02

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257 77, H01L 2980, H01L 310312

Patent

active

056939698

ABSTRACT:
A lateral MESFET (10,20) utilizes a drain (17) and a source (18) damage termination layer to improve the breakdown voltage of the MESFET (10,20). The source (18) and drain (17) damage termination layers are very shallow to prevent interfering with lateral current flow in the channel layer (12). The source (18) and drain (17) damage termination layers are formed by implanting large inert ions using high implant doses and low implantation energies.

REFERENCES:
patent: 4263340 (1981-04-01), Nuzillat et al.
patent: 5399883 (1995-03-01), Baliga
Shimamoto et al., "Improvement of breakdown voltage characteristics of GaAs junction by damage-creation of ion-implantation", Inst. Phys. Conf. Ser. No. 120, Chapter 4, Paper presented at Int. Symp. GaAs and Related Compounds, Seattle, 1991,1992 IOP Publishing Ltd., pp. 199-202.

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