MESFET for dielectrically isolated integrated circuits

Details MESFET for dielectrically isolated integrated circuits MESFET for dielectrically isolated integrated circuits

1990-05-15

1991-05-07

James, Andrew J.

357 15, 357 22, H01L 2712, H01L 2948, H01L 2956, H01L 2980

Patent

active

050141082

ABSTRACT:
A MESFET wherein a Schottky top gate which extends across the channel region between the source and drain regions and beyond sides of the dielectric isolation in which the device is built at two points. The bottom gate also extends beyond the dielectric isolation below the surface of the island and intersects the bottom of the source and drain regions. Where a bottom gate contact region forms an annulus encompassing the source and drain, the top gate extends across the channel and only onto sides of the bottom gate contact region at two points. The source and drain regions which are formed are sufficiently spaced from the dielectric isolation so as not to effect the I.sub.DSS resulting from variation in the island size.

REFERENCES:
patent: 3722079 (1973-03-01), Beasom
patent: 3755012 (1973-08-01), George et al.
patent: 4185291 (1980-01-01), Hirao et al.
patent: 4187514 (1980-02-01), Tomisawa et al.
patent: 4260431 (1981-04-01), Piotrowski
patent: 4287526 (1981-09-01), Sakuma
patent: 4456918 (1984-06-01), Beasom
patent: 4495694 (1985-01-01), Beasom
patent: 4532003 (1985-07-01), Beasom
patent: 4546539 (1985-10-01), Beasom
patent: 4587656 (1986-05-01), Hartman et al.
patent: 4603469 (1986-08-01), Armiento et al.
patent: 4665425 (1987-05-01), Piotrowski
patent: 4783688 (1988-11-01), Shannon
Ziegler et al., "Self Isolating Bathtub Collector for a Planar Transistor," IBM Tech. Discl, vol. 14, #5, 10-71, pp. 1635-1636.

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