MESFET device having a semiconductor surface barrier layer

Details MESFET device having a semiconductor surface barrier layer MESFET device having a semiconductor surface barrier layer

1988-07-05

1990-10-02

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437912, H01L 21265, H01L 21338

Patent

active

049607189

ABSTRACT:
An InP MESFET having a semiconductor surface barrier layer formed of GaInP or AlInP. The semiconductor surface barrier layer is formed between an active layer and a gate electrode and the barrier height of the gate for the semiconductor surface barrier layer is higher than the barrier height of the gate for InP. In a method of forming an InP MESFET according to the present invention, the semiconductor surface barrier layer is formed by high dose implantation of Ga or Al into the active region. Surface barrier layers formed of other compounds, for example GaInAsP or AlInAsP, which have a lattice match with InP can be formed by other methods such as epitaxial growth.

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