MESFET device formed on a semi-insulative substrate

Details MESFET device formed on a semi-insulative substrate MESFET device formed on a semi-insulative substrate

1988-03-24

1989-09-19

Larkins, William D.

357 15, 357 68, 357 53, H01L 2980, H01L 2352

Patent

active

048689203

ABSTRACT:
A MESFET device includes a semi-insulative substrate, a source region, a drain region, a channel region, a source electrode, a drain electrode, a gate electrode, and a gate-electrode pad. The source region, drain region, and the channel region are formed in a surface region of the substrate. The three electrode and the gate-electrode pad are formed on the substrate. The MESFET device further comprises a conductive layer formed on the substrate and surrounds the source electrode and the gate-electrode pad. The conductive layer is connected to the drain electrode.

REFERENCES:
patent: 4219827 (1980-08-01), Kaiser
patent: 4315272 (1982-02-01), Vorhaus
patent: 4409608 (1983-10-01), Yoder
patent: 4498093 (1985-02-01), Allyn
patent: 4656055 (1987-04-01), Dwyer
patent: 4737837 (1988-04-01), Lee

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