Mesa zener diode and method of manufacture thereof

Details Mesa zener diode and method of manufacture thereof Mesa zener diode and method of manufacture thereof

1987-06-01

1988-10-04

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437904, 437189, 148DIG174, 357 13, H01L 2170, H01L 2700, H01L 2144, H01L 2148

Patent

active

047756438

ABSTRACT:
A mesa Zener diode is described which is manufactured by ion implanting a region of opposite conductivity into a substrate; etching a moat in a surface of the substrate through the region of opposite conductivity; depositing an oxide layer having an opening exposing a portion of the mesa; and depositing top and bottom metals.

REFERENCES:
patent: 4028563 (1977-06-01), Geisler
patent: 4030117 (1977-06-01), Kling
patent: 4177095 (1979-12-01), Nelson
patent: 4484206 (1984-11-01), Moroshima et al.
patent: 4594602 (1986-06-01), Iimura et al.
patent: 4646114 (1987-02-01), Vinn et al.
Wilson et al., "Rapid Annealing Technology For Future VLSI", Solid State Technology, June 1985, pp. 185-190.
Ghandhi, VLSI Fabrication Principles, John Wiley and Sons, 1983, pp. 371-417, 542-548, 569-575.

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