Mesa vertical-cavity surface-emitting laser

Details Mesa vertical-cavity surface-emitting laser Mesa vertical-cavity surface-emitting laser

2008-05-30

2011-12-06

Stultz, Jessica (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S050110

Reexamination Certificate

active

08073034

ABSTRACT:
The present invention provides an improved mesa vertical-cavity surface-emitting laser (VCSEL), in which a first distributed Bragg reflector (DBR) mesa of semiconductor material is disposed on a top surface of an active layer. A contact annulus is disposed on a contact region of a top surface of the first DBR mesa, such that an inner circumference of the contact annulus defines a window region of the top surface of the first DBR mesa. A second DBR mesa of dielectric material is disposed on the window region. Whereas the first DBR mesa has a first reflectance at a lasing wavelength that is insufficient to sustain lasing in the active layer, the first DBR mesa and the second DBR mesa together have a total reflectance at the lasing wavelength that is sufficient to sustain lasing in the active layer under the window region.

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