Mesa-type transistor and method of producing same

Details Mesa-type transistor and method of producing same Mesa-type transistor and method of producing same

1978-11-16

1981-02-03

Edlow, Martin H.

357 56, H01L 2906

Patent

active

042491959

ABSTRACT:
The invention relates to a mesa transistor comprising a highly doped substrate, on which there is provided a lower doped collector region of the same conductivity type, a base zone of the opposite conductivity type provided on said collector region and an emitter zone provided in the base region with the mesa being formed by a recess in a flat upper face of the semiconductor plate which recess fully encloses the base zone and extends into the substrate. According to the invention the recess consists of a first portion extending over a part of the thickness of said collector region only, and a groove extending from the bottom of this first portion into the substrate. The wall and the bottom of this last-mentioned groove preferably everywhere adjoin a thin, highly doped semiconductor zone of the same conductivity type as the substrate.

REFERENCES:
patent: 4156250 (1979-05-01), Trap
patent: 4165516 (1979-08-01), Smulders
Maheux, I.B.M. Tech. Disc., Ball. vol. 11, No. 12, May 1969, p. 1690.

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