Mesa type thyristor and its making method

Details Mesa type thyristor and its making method Mesa type thyristor and its making method

1973-11-19

1976-06-01

James, Andrew J.

Metal treatment

Stock

Ferrous

357 38, 357 52, 357 56, 148186, H01L 29747, H01L 744

Patent

active

039613542

ABSTRACT:
An improved method of manufacturing a mesa type thyristor includes the formation, onto at least one face of a semiconductor substrate of a prescribed conductivity type of a ring or rings, of a deeply diffused region of the same conductivity type or that of the substrate but of a higher impurity concentration. As a result, the ring or rings of the deeply diffused region, surrounding the essential part of the thyristor, are, subsequent to the process of mesa-etching, exposed along the peripheral surface linking both faces of the substrate. The high-doped ring serves to effectively prevent an undesirable inducing of an inversion layer (i.e. channel region) across both surfaces of the substrate.

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patent: 3608186 (1971-09-01), Hutson

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