Mesa type semiconductor device

Details Mesa type semiconductor device Mesa type semiconductor device

1977-10-27

1980-07-29

Wojciechowicz, Edward J.

357 13, 357 52, H01L 2906

Patent

active

042153581

ABSTRACT:
A P type semiconductor layer is epitaxially grown on an N.sup.+ type semiconductor substrate to form a PN junction between them so as to expose its circumference to the peripheral surface of the substrate. The P type layer is formed into a mesa having a tilted surface to which the circumference of the PN junction is exposed. Then an N.sup.+ type diffusion layer is disposed on the tilted mesa surface to protect the PN junction.

REFERENCES:
patent: 3746587 (1973-07-01), Rosvold
patent: 3961356 (1976-06-01), Kool

Affiliated with

Also associated with

Rating

Mesa type semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Mesa type semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mesa type semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-907129