Mesa-type photodetectors with lateral diffusion junctions

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure

Reexamination Certificate

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C257S442000, C257SE31005, C438S072000

Reexamination Certificate

active

08030684

ABSTRACT:
The present invention relates to a stable mesa-type photodetector with lateral diffusion junctions. The invention has found that without resorting to the complicated regrowth approach, a simple Zn diffusion process can be used to create high-quality semiconductor junction interfaces at the exposed critical surface or to terminate the narrow-bandgap photon absorption layers. The invention converts the epi material layers near or at the vicinity of the etched mesa trench or etched mesa steps into a different dopant type through impurity diffusion process. Preferably the diffused surfaces are treated with a subsequent surface passivation. This invention can be applied to both top-illuminating and bottom-illuminating configurations.

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