Mesa-structure avalanche photodiode having a buried epitaxial ju

Details Mesa-structure avalanche photodiode having a buried epitaxial ju Mesa-structure avalanche photodiode having a buried epitaxial ju

1997-04-01

1999-02-02

Whitehead, Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257186, 257438, 257466, 257605, 438 39, 438 41, H01L 3100, H01L 31107, H01L 29861

Patent

active

058669361

ABSTRACT:
A mesa-structure avalanche photodiode in which a buffer region in the surface of the mesa structure effectively eliminates the sharply-angled, heavily doped part of the cap layer that existed adjacent the lightly-doped n-type multiplication layer and p-type guard ring before the buffer region was formed. This reduces electric field strength at the ends of the planar epitaxial P-N junction and prevents edge breakdown in this junction. The lateral extent of the guard ring is defined by a window formed in a masking layer prior to regrowth of the guard ring. This guard ring structure eliminates the need to perform additional processing steps to define the lateral extent of the guard ring and passivate the periphery of the guard ring.

REFERENCES:
patent: 3886579 (1975-05-01), Ohuchi et al.
patent: 4326211 (1982-04-01), Smeets
patent: 4684969 (1987-08-01), Taguchi
patent: 4719498 (1988-01-01), Wada et al.
patent: 4840916 (1989-06-01), Yasuda et al.
patent: 4885622 (1989-12-01), Uchiyama et al.
patent: 5045908 (1991-09-01), Lebby
patent: 5057891 (1991-10-01), Torikai
patent: 5075750 (1991-12-01), Tagawa
patent: 5132747 (1992-07-01), Matsushima et al.
patent: 5144381 (1992-09-01), Furuyama et al.
patent: 5157473 (1992-10-01), Okazaki
patent: 5179430 (1993-01-01), Toriakai
patent: 5204539 (1993-04-01), Tsuji et al.
patent: 5233209 (1993-08-01), Radgers et al.
patent: 5308995 (1994-05-01), Tsuji et al.
patent: 5343055 (1994-08-01), Davis et al.
patent: 5569942 (1996-10-01), Kusakabe
patent: 5610416 (1997-03-01), Su et al.
patent: 5654578 (1997-08-01), Watanabe

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