Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With thin active central semiconductor portion surrounded by...
Patent
1995-11-07
1997-03-11
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With thin active central semiconductor portion surrounded by...
257620, 257623, H01L 21302, H01L 2974
Patent
active
056104340
ABSTRACT:
Mesa diodes of improved mechanical properties are formed by providing a central depression in the regions of the chip from which the mesa is formed before the diffusion step that forms the rectifying junction in the mesa. In symmetric diodes, symmetric depressions are formed on both the top and bottom surfaces of the chip.
REFERENCES:
patent: 3553536 (1971-01-01), Neilson
patent: 4220963 (1980-09-01), Rumennik
patent: 4259682 (1981-03-01), Gamo
patent: 5313092 (1994-05-01), Tsarata et al.
Brogle James J.
Davis Harold P.
Guillot Jean-Michel
Korwin-Pawlowski Michael
General Instrument Corporation of Delaware
Monin, Jr. Donald L.
Ostroff Irwin
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