Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating
Patent
1975-10-22
1977-02-08
Kaplan, G. L.
Chemistry: electrical and wave energy
Processes and products
Vacuum arc discharge coating
29580, 156643, 156649, 2041293, 20412935, 20412965, 20412975, C23C 1500
Patent
active
040071049
ABSTRACT:
A method of manufacturing a semiconductor device wherein a semiconductor layer of one conductivity type is provided on a semiconductor body of the same conductivity type but of higher conductivity, a mesa is formed by etching away with a reactive gas plasma the semiconductor material around a masked area defining a mesa, and the mesa is then undercut by further etching by a gas plasma that removes material of the body faster than material of the layer so as to produce a bevelled mesa.
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DE Nobel et al., "Impatt Diodes," Philips Tech. Rev., vol. 32, pp. 328-344 (1971).
Appels et al., "Local Oxidation of Silicon and Its Application in Semiconductor-Device Technology," Philips Res. Reports, vol. 25, pp. 118-132 (1970).
R. A. Cohen, "Si.sub.3 N.sub.4 -Masked Thermally Oxidized Post-Diffused Mesa Process (Simtop)," IEE Trans Electron Devices vol. ed-18, pp. 54-57 (1971).
R. M. Valletta, "Control of Edge Profile in Sputter Etching," IBM Tech. Disc. Bull., vol. 10, No. 12, May 1968, p. 1974.
Ayling Mildred Avis
Josh Michael John
Summers John Gilbert
Kaplan G. L.
Trifari Frank R.
U.S. Philips Corporation
Weisstuch Aaron
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