Mesa devices fabricated on channeled substrates

Details Mesa devices fabricated on channeled substrates Mesa devices fabricated on channeled substrates

1978-04-26

1980-11-25

Davie, James W.

Oscillators

Molecular or particle resonant type

357 18, 357 56, H01S 319

Patent

active

042361222

ABSTRACT:
Parallel channels are separated by ridges formed in a semiconductor body in such a way that each channel is wider at its base than at its top. Molecular beam epitaxy is used to deposit semiconductor layers on the ridges and in the channels. Because each channel is narrower at its top than at its base, the configuration is essentially self-masking. That is, the layers in the channel are physically separate from those on the ridges, as would be metallic contacts deposited on the layers. This technique is employed in the fabrication of a plurality of self-aligned, stripe geometry, mesa double heterostructure junction lasers.

REFERENCES:
patent: 3457633 (1969-07-01), Marinace et al.
patent: 3725147 (1973-04-01), Roizin et al.
patent: 3996528 (1976-12-01), Blum et al.
patent: 4032944 (1977-06-01), Dongen et al.
patent: 4128845 (1978-12-01), Sakai
Nagata et al., "Self-Masking Selective Epitaxoy by Molecular-Beam Method," Journal of Applied Physics, vol. 48, No. 3, Mar. 1977, pp. 940-942.
Lee et al., Low-Threshold Room-Temperature Embedded Heterostructure Lasers," Applied Physics Letters, vol. 29, No. 6, Sep. 15, 1976, pp. 365-367.
Cho et al., "Continuous Room-Temperature Operation of GaAs-Al.sub.x Ga.sub.1-x As Double-Heterostructure Lasers Prepared by Molecular-Beam Epitaxy," Applied Physics Letters, vol. 28, No. 9, May 1, 1976, pp. 501-503.
Zory, "Continuous Wave Laser Array," IBM Technical Disclosure Bulletin, vol. 18, No. 10, Mar. 1976, p. 3497.

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