Mesa bipolar transistor with sub base layer

Details Mesa bipolar transistor with sub base layer Mesa bipolar transistor with sub base layer

1997-01-17

1999-01-19

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257198, 257554, 257571, 257588, 257592, H01L 27082, H01L 27102, H01L 2970, H01L 3111

Patent

active

058616403

ABSTRACT:
A mesa bipolar transistor comprising a collector layer formed on a surface of a substrate, a base layer disposed on the substrate so as to be joined to the collector layer, an emitter layer disposed on the base layer is further provided with a sub base layer comprising at least one of a polysilicon layer containing impurities, a metallic silicide, and a diffused layer formed on the surface of the substrate and being disposed under or on the external base region which is a region of the base layer lateral to that under the emitter layer so that the thickness of the external base region is increased to provide high conductivity.

REFERENCES:
patent: 4883772 (1989-11-01), Cleeves et al.
patent: 4887145 (1989-12-01), Washio et al.
patent: 5346840 (1994-09-01), Fujioka

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