Mesa bipolar transistor with edge contacts

Details Mesa bipolar transistor with edge contacts Mesa bipolar transistor with edge contacts

1990-04-06

1990-11-06

James, Andrew J.

357 49, 357 50, 357 52, 357 56, H01L 2712, H01L 2704, H01L 2906, H01L 2934

Patent

active

049690264

ABSTRACT:
A semiconductor device having a monocrystalline silicon region (3) comprising a first zone (9) and an adjacent second zone (10) and laterally enclosed by a sunken oxide layer (4) and by an overlying highly doped polycrystalline silicon layer (5). The silicon layer (5) is laterally separated by an oxide layer (6) from the silicon region (3) and adjoins the first zone (9) on a narrow edge portion of the upper surface of the region (3), this zone being of the same conductivity type as the silicon layer (5). The second zone (10) is provided with an electrode layer (11). According to the invention, the silicon layer (5) is separated from the electrode layer (11) by an oxide strip (12A) formed in a self-aligned manner and at least one doped connection zone (13) having a width determined by the oxide strip (12A) is situated between the first and the second zones and located below the oxide strip (12A). The invention further relates to a method of manufacturing this device.

REFERENCES:
patent: Re31580 (1989-05-01), Kodi
patent: 4680085 (1987-07-01), Vijan et al.
patent: 4746623 (1988-05-01), Lane
Washio et al., "E 48 ps ECL in a Self-Aligned Bipolar Technology," ISSCC '87, pp. 58-59.

Affiliated with

Also associated with

Rating

Mesa bipolar transistor with edge contacts does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Mesa bipolar transistor with edge contacts, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mesa bipolar transistor with edge contacts will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1309819