MES field effect transistor possessing lightly doped drain

Details MES field effect transistor possessing lightly doped drain MES field effect transistor possessing lightly doped drain

1994-12-22

1996-07-02

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257282, 257408, H01L 2980, H01L 31112, H01L 2976

Patent

active

055325076

ABSTRACT:
In a MESFET of this invention possessed of an LDD structure, a current control layer possessed of conduction type opposite to that of an active layer is formed below the active layer. In the part of this current control layer underlying a gate electrode, a low impurity concentration region destined to function as a channel region for a transistor is formed. Further, LDD regions are formed at both sides of the channel region. In the current control layer, the part underlying the channel region is kept at a low impurity concentration while the other parts underlying the LDD regions are kept at a higher impurity concentration than the part underlying the channel region. Thus, a MESFET possessed of an improved short channel effect and excellent high frequency characteristics is obtained.

REFERENCES:
patent: 4803526 (1989-02-01), Terada et al.
patent: 4894692 (1990-01-01), Noda et al.
Patent Abstracts of Japan. vol. 011 No. 292 (E-543), 19 Sep. 1987 & JP-A-62-092377 (Hitachi Ltd.; Others: 01) 27 Apr. 1987 *abstract*.
Patent Abstracts of Japan. vol. 013 No. 513 (E-847), 16 Nov. 1989 & JP-A-01 208869 (Fujitsu Ltd.) 22 Aug. 1989 *abstract*.
Matsunaga et al, T0.35 .mu.M WNx/W gate BPLDD GaAs MESFET for ultraspeed digital IC Technical Report of IEICE, ED92 128, VW92 131 ICD92 119 (1993 01) pp. 35-40.

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