Merged P-i-N schottky structure

Details Merged P-i-N schottky structure Merged P-i-N schottky structure

2006-07-04

2006-07-04

Tran, Thien F. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

C257S472000, C257S473000, C257S481000, C257S482000, C257S483000, C257S484000, C257S485000, C257S486000

Reexamination Certificate

active

07071525

ABSTRACT:
A Merged P-i-N Schottky device in which the oppositely doped diffusions extend to a depth and have been spaced apart such that the device is capable of absorbing a reverse avalanche energy comparable to a Fast Recovery Epitaxial Diode having a comparatively deeper oppositely doped diffusion region.

REFERENCES:
patent: 6524900 (2003-02-01), Dahlqvist et al.
patent: 2004/0061195 (2004-04-01), Okada et al.
patent: 03-024767 (1991-02-01), None
patent: 10-117003 (1998-05-01), None

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