Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Having only two terminals and no control electrode – e.g.,...
Patent
1995-06-07
1998-01-20
Brown, Peter Toby
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Having only two terminals and no control electrode , e.g.,...
257139, 257147, 257152, 257378, H01L 29744, H01L 29749
Patent
active
057104433
ABSTRACT:
A merged power device structure, of the emitter-switching type, in which the emitter of the bipolar power transistor has a minimum-width pattern which is aligned to the trenches of a trench control transistor. Thus the current density of the bipolar is maximized, since the emitter edge length per unit area is increased. The parasitic base resistance of the bipolar can also be reduced.
REFERENCES:
patent: 5304821 (1994-04-01), Hagino
patent: 5410170 (1995-04-01), Bulucea et al.
patent: 5471075 (1995-11-01), Shekar et al.
Blanchard, "A Power Transistor With an Integrated Thermal Feedback Mechanism, " Massachusetts Institute of Technology (1970).
Tukune, et al., "Spontaneous Polysilicon and Epitaxial Silicon Deposition,"J. Electrochem Soc., vol. 142, No. 5 (1995).
Brown Peter Toby
Galanthay Theodore E.
Jorgenson Lisa K.
SGS-Thompson Microelectronics, Inc.
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