Merged complementary bipolar and MOS means and method

Details Merged complementary bipolar and MOS means and method Merged complementary bipolar and MOS means and method

1989-01-25

1992-05-26

James, Andrew J.

357 41, 357 42, 357 44, 357 49, 357 50, H01L 2702, H01L 2712, H01L 2704

Patent

active

051172747

ABSTRACT:
A means and method for forming improved merged complementary bipolar, complementary MOS (CBICMOS) structures is described. The N-channel and N-base devices are gouped in a first isolated semiconductor region and the P-channel and P-base devices are grouped in a second isolated semiconductor region. The two regions are separated by lateral isolation. By sharing internal device regions and arranging the internal device regions in the proper sequence a particularly compact structure is obtained which may be wired to implement a variety of CBICMOS circuits using a single wiring layer. Both CMOS and vertical NPN and PNP bipolar devices are produced in a common substrate by a common process.

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