Patent
1989-01-25
1992-05-26
James, Andrew J.
357 41, 357 42, 357 44, 357 49, 357 50, H01L 2702, H01L 2712, H01L 2704
Patent
active
051172747
ABSTRACT:
A means and method for forming improved merged complementary bipolar, complementary MOS (CBICMOS) structures is described. The N-channel and N-base devices are gouped in a first isolated semiconductor region and the P-channel and P-base devices are grouped in a second isolated semiconductor region. The two regions are separated by lateral isolation. By sharing internal device regions and arranging the internal device regions in the proper sequence a particularly compact structure is obtained which may be wired to implement a variety of CBICMOS circuits using a single wiring layer. Both CMOS and vertical NPN and PNP bipolar devices are produced in a common substrate by a common process.
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Zollo, "The Boom Starts in Smart Power Products" Electronics, Jul. 24, 1986 pp. 97-101.
Barbee Joe E.
James Andrew J.
Langley Stuart T.
Motorola Inc.
Ngo Ngan Van
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