Merged bipolar and complementary metal oxide semiconductor trans

Details Merged bipolar and complementary metal oxide semiconductor trans Merged bipolar and complementary metal oxide semiconductor trans

1990-02-27

1991-06-11

Mintel, William

357 34, 357 42, 357 50, 357 49, 357 48, H01L 2702

Patent

active

050236903

ABSTRACT:
A method of making a merged bipolar and field effect semiconductor transistors on a semiconductor substrate by forming a diffused buried DUF collector region of a second conductivity type in the substrate, and growing an impurity doped epitaxial layer of silicon of the second conductivity type over the substrate. Once the epitaxial layer is grown, a plurality of isolation regions are formed in this layer. A bipolar transistor is formed over the DUF region in a bipolar isolation region and a field effect transistor formed in the second isolation region. Contacts and interconnects are deposited and patterned.

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