Mercury containment for liquid phase growth of mercury cadmium t

Details Mercury containment for liquid phase growth of mercury cadmium t Mercury containment for liquid phase growth of mercury cadmium t

1981-10-05

1983-01-04

McIntosh, John P.

Coating apparatus

Immersion or work-confined pool type

Work-confined pool

118412, H01L 21208

Patent

active

043667716

ABSTRACT:
Hg.sub.1-x Cd.sub.x Te is an important semiconductor for use in photovoltaic and photoconductive infrared photon detectors. Hg.sub.1-x Cd.sub.x Te can be grown by liquid phase epitaxy at atmospheric pressure from a Te-rich solution in which case the Hg vapor pressure is below 0.1 atm at 500.degree. C. This low vapor pressure makes possible the use of open-tube, slider growth techniques. The present invention describes a covered graphite slider system which provides an additional source of Hg, minimizes loss of Hg from the source wafer and virtually prevents loss of Hg from the (Hg.sub.1-x Cd.sub.x).sub.1-y Te.sub.y growth solution.

REFERENCES:
patent: 3770518 (1973-11-01), Rosztoczy et al.
"Holder for Liquid Phase Epitaxy Crystal Growth," DeGelormo et al., IBM Technical Disclosure Bulletin, vol. 16, No. 7, Dec. 1973.

Affiliated with

Also associated with

Rating

Mercury containment for liquid phase growth of mercury cadmium t does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Mercury containment for liquid phase growth of mercury cadmium t, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mercury containment for liquid phase growth of mercury cadmium t will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1579040