1977-07-05
1979-01-30
Edlow, Martin H.
357 61, 357 52, 357 91, H01L 2714
Patent
active
041375440
ABSTRACT:
A mercury cadmium telluride photodiode includes an n-type mercury cadmium telluride body with an accumulation layer proximate a first surface of the body. A p-type region is formed in the body at the first surface so that the n-type accumulation layer surrounds the p-type region at the first surface.
REFERENCES:
patent: 3743553 (1973-07-01), Scott
patent: 3977018 (1976-08-01), Catagnus
patent: 4081819 (1978-03-01), Wong
Foyt et al., Applied Physics Lett., vol. 18, No. 8, 15 Apr. 1971.
Edlow Martin H.
Honeywell Inc.
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