Mercury cadmium telluride infrared focal plane devices having st

Details Mercury cadmium telluride infrared focal plane devices having st Mercury cadmium telluride infrared focal plane devices having st

1984-09-25

1986-12-16

James, Andrew J.

357 54, 357 232, 357 2315, 357 61, H01L 2978, H01L 29161

Patent

active

046300902

ABSTRACT:
The disclosure relates to a stepped insulator process for HgCdTe infared focal plane devices, the insulator being a combination of two insulator materials, ZnS and SiO, which differ in dielectric constant and chemical reactivity. The structure is patterned on HgCdTe which has an accumulated surface region. The resulting configuration significantly reduces pin hole short circuits introduced during via etching and improves the operating range (channel stopping action) for a given step height over that of ZnS alone.

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patent: 4286278 (1981-08-01), Lorenze, Jr. et al.
patent: 4360732 (1982-11-01), Chapman et al.
Sequin et al., Charge Transfer Devices, Chap. 3, Bell Telephone Laboratories, 1975, pp. 26, 39-42.

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