Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal
Reexamination Certificate
2006-07-04
2006-07-04
Pham, Hoai (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
C257S252000, C257S254000, C257S415000
Reexamination Certificate
active
07071520
ABSTRACT:
MEMS devices are provided that are capable of movement due to a flexible portion formed of unique materials for this purpose. The MEMS device can have a flexible portion formed of a nitride or oxynitride of at least one transition metal, and formed of a nitride or oxynitride of at least one metalloid or near metalloid; a flexible portion formed of a single transition metal nitride or oxynitride and in the absence of any other metal or metalloid nitrides; a flexible portion formed of one or more late transition metal nitrides or oxynitrides; a flexible portion formed of a single transition metal in nitride form, and an additional metal substantially in elemental form; or a flexible portion formed of at least one metalloid nitride or oxynitride. The MEMS devices can be any device, though preferably one with a flexible portion such as an accelerometer, DC relay or RF switch, optical cross connect or optical switch, or micromirror arrays for direct view and projection displays. The flexible portion (e.g. the hinge of the micromirror) is preferably formed by sputtering a metal and/or metalloid target in nitrogen ambient so as to result in a sputtered hinge. It is also possible to form other parts of the MEMS device (e.g structural parts that do not flex).
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Duong Khanh
Muir Gregory R.
Pham Hoai
Reflectivity, INC
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