MEMS RF switch integrated process

Details MEMS RF switch integrated process MEMS RF switch integrated process

2006-12-05

2006-12-05

Kebede, Brook (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

C257S433000

Reexamination Certificate

active

07145213

ABSTRACT:
A capacitance coupled, transmission line-fed, radio frequency MEMS switch and its fabrication process using photoresist and other low temperature processing steps are described. The achieved switch is disposed in a low cost dielectric housing free of undesired electrical effects on the switch and on the transmission line(s) coupling the switch to an electrical circuit. The dielectric housing is provided with an array of sealable apertures useful for wet, but hydrofluoric acid-free, removal of switch fabrication employed materials and also useful during processing for controlling the operating atmosphere surrounding the switch—e.g. at a pressure above the high vacuum level for enhanced switch damping during operation. Alternative arrangements for sealing an array of dielectric housing apertures are included. Processing details including plan and profile drawing views, specific equipment and materials identifications, temperatures and times are also disclosed.

REFERENCES:
patent: 5090254 (1992-02-01), Guckel et al.
patent: 5589082 (1996-12-01), Lin et al.
patent: 6118164 (2000-09-01), Seefeldt et al.
patent: 6444135 (2002-09-01), Hanabe et al.
patent: 6452124 (2002-09-01), York et al.
patent: 6452238 (2002-09-01), Orcutt et al.
patent: 6472739 (2002-10-01), Wood et al.
patent: 6525396 (2003-02-01), Melendez et al.
patent: 6621387 (2003-09-01), Hopcroft
patent: 6635509 (2003-10-01), Ouellet
patent: 6635919 (2003-10-01), Melendez et al.
patent: 6673697 (2004-01-01), Ma et al.
patent: 6686820 (2004-02-01), Ma et al.
patent: 2003/0047533 (2003-03-01), Reid et al.
patent: 2003/0155643 (2003-08-01), Friedhoff
E.R. Brown, “RF-MEMS Switches for Reconfigurable Integrated Circuits”, IEEE Trans. on Microwave Theory and Techniques, Nov. 1998, pp. 1868-1880, vol. 46, No. 11.
J. Lee et al., “Monolithic 2-18 GHz Low Loss, On-Chip Biased PIN Diode Switches”, IEEE Trans. on Microwave Theory an dTechniques, Feb. 1995, pp. 250-255, vol. 43.
V.J. Kapoor, “InGaAs Microwave Switch Transistors for Phase Shifter Circuits”, IEEE Trans. on Microwave Theory and Techniques, May 1994, pp. 772-778, vol. 42.
K. Leedy et al, “Metallization Schemes for RF MEMS Switches”, J. Vacuum Science Technology, Jul./Aug. 2003, pp. 1172-1177, vol. A 21(4).
H. Elderstig and P. Wallgren, “Spin Depositioin of Polymers over Holes and Cavities”, Sensors and Actuators, 1995, pp. 95-97, vol. A 46—46.
M. Madou,Fundamentals of Microfabrication, 1997, p. 378, CRC Press, Boca Raton, Florida.

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