Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-06-06
2006-06-06
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S444000, C438S052000
Reexamination Certificate
active
07057251
ABSTRACT:
Micromechanical devices are provided that are capable of movement due to a flexible portion. The micromechanical device can have a flexible portion formed of an oxide of preferably an element from groups 3A to 6A of the periodic table (preferably from the first two rows of these groups) and a late transition metal (preferably from groups 8B or 1B of the periodic table). The micromechanical devices can be any device, particularly MEMS sensors or actuators preferably having a flexible portion such as an accelerometer, DC relay or RF switch, optical cross connect or optical switch, or a micromirror part of an array for direct view and projection displays. The flexible portion is preferably formed by sputtering a target having a group 8B or 1B element and a selected group 3A to 6A element, namely B, Al, In, Si, Ge, Sn, or Pb. The target can have other major constituents or impurities (e.g. additional group 3A to 6A element(s)). The target is reactively sputtered in a oxygen ambient so as to result in a sputtered hinge. It is possible to form both stiff and/or flexible portions of the micromechanical device in this way.
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Duong Khanh
Muir Gregory R.
Reflectivity, INC
Smith Zandra V.
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