Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2007-11-06
2007-11-06
Crane, Sara (Department: 2811)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S692000, C438S695000, C438S697000, C257S532000, C257S303000, C257S306000, C257S307000, C428S128000
Reexamination Certificate
active
10623965
ABSTRACT:
The present invention relates to a chip package that includes a semiconductor device and at least one micro electromechanical structure (MEMS) such that the semiconductor device and the MEMS form an integrated package. One embodiment of the present invention includes a semiconductor device, a first MEMS device disposed in a conveyance such as a film, and a second MEMS device disposed upon the semiconductor device through a via in the conveyance.The present invention also relates to a process of forming a chip package that includes providing a conveyance such as a tape automated bonding (TAB) structure, that may hold at least one MEMS device. The method is further carried out by disposing the conveyance over the active surface of the device in a manner that causes the at least one MEMS to communicate electrically to the active surface. Where appropriate, a sealing structure such as a solder ring may be used to protect the MEMS.
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Cheng Peng
Ma Qing
Rao Valluri
Blakely , Sokoloff, Taylor & Zafman LLP
Gebremariam Samuel A.
Intel Corporation
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