MEMS device and method of forming MEMS device

Optical: systems and elements – Optical modulator – Light wave temporal modulation

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C359S223100, C359S295000

Reexamination Certificate

active

07079301

ABSTRACT:
A method of forming a MEMS device includes providing a substructure including a base material and at least one conductive layer formed on a side of the base material, forming a dielectric layer over the at least one conductive layer of the substructure, defining an actuating area for the MEMS device on the dielectric layer, including depositing a conductive material on the dielectric layer and communicating the conductive material with the at least one conductive layer of the substructure through the dielectric layer, forming a sacrificial layer over the conductive material and the dielectric layer, including depositing silicon over the conductive material and the dielectric layer, and forming a substantially planar surface of the silicon, forming an actuating element over the sacrificial layer within the actuating area, including communicating the actuating element with the conductive material of the actuating area through the sacrificial layer, and substantially removing the sacrificial layer between the actuating element and the dielectric layer.

REFERENCES:
patent: 5485304 (1996-01-01), Kaeriyama
patent: 5583688 (1996-12-01), Hornbeck
patent: 5631782 (1997-05-01), Smith et al.
patent: 5646768 (1997-07-01), Kaeriyama
patent: 5650881 (1997-07-01), Hornbeck
patent: 5703728 (1997-12-01), Smith et al.
patent: 5847454 (1998-12-01), Shaw et al.
patent: 5919548 (1999-07-01), Barron et al.
patent: 6025951 (2000-02-01), Swart et al.
patent: 6038056 (2000-03-01), Florence et al.
patent: 6121552 (2000-09-01), Brosnihan et al.
patent: 6323982 (2001-11-01), Hornbeck
patent: 6342430 (2002-01-01), Adams et al.
patent: 6396368 (2002-05-01), Chow et al.
patent: 6440766 (2002-08-01), Clark
patent: 6469330 (2002-10-01), Vigna et al.
patent: 6480320 (2002-11-01), Nasiri
patent: 6504643 (2003-01-01), Peeters et al.
patent: 6523961 (2003-02-01), Ilkov et al.
patent: 6735004 (2004-05-01), Hagelin et al.
patent: 6770211 (2004-08-01), DeBar et al.
patent: 6912336 (2005-06-01), Ishii et al.
patent: 2002/0039470 (2002-04-01), Braun et al.
patent: 2002/0117728 (2002-08-01), Brosnihhan et al.
patent: 2003/0034535 (2003-02-01), Barenburg et al.
patent: 2003/0174934 (2003-09-01), Ishii et al.
patent: 1093143 (2001-04-01), None
patent: 2000314634 (2001-07-01), None
J.H. Smith et al., “Material and Processing Issues for the Monolithic Integration of Microelectronics with Surface-Micromachined Polysilicon Sensors and Actuators” SPIE, Oct. 1995, pp. 1-10.
Oliver Brand, “CMOS-based MEMS/DTU PhD Course/Topics in Microelectronics”, Physical Electronics Laboratory, ETH Zurich, http://www.iqu.ethz.ch/pel, slides A-2 through A-36.
J.H. Smith et al., “Embedded Micromechanical Devices for the Monolithic Integration of MEMS with CMOS”, 1995 IEEE, pp. 609-612.
Bikram Baidaya et al., “Layout Verification and Correction of CMOS-MEMS Layouts”, Carnegie Mellon University, Pittsburgh.
Jeffrey D. Zahn et al., A Direct Plasma Etch Approach to High Aspect Ratio Polymer Micromachining With Applications in Biomems and CMOS-MEMS, 2002 IEEE, pp. 137-140.
Jim Hunter et al., “CMOS friendly MEMS manufacturing process”, 1998 IEEE, pp. 103-104.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

MEMS device and method of forming MEMS device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MEMS device and method of forming MEMS device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MEMS device and method of forming MEMS device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3592753

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.