MEMS based contact conductivity electrostatic chuck

Details MEMS based contact conductivity electrostatic chuck MEMS based contact conductivity electrostatic chuck

2005-06-14

2005-06-14

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Roughened surface

C438S597000

Reexamination Certificate

active

06905984

ABSTRACT:
The present invention is directed to a method for clamping and processing a semiconductor substrate using a semiconductor processing apparatus. According to one aspect of the present invention, a multi-polar electrostatic chuck and associated method is disclosed which provides heating or cooling of a substrate by thermal contact conduction between the electrostatic chuck and the substrate. The multi-polar electrostatic chuck includes a semiconductor platform having a plurality of protrusions that define gaps therebetween, wherein a surface roughness of the plurality of protrusions is less than 100 Angstroms. The electrostatic chuck further includes a voltage control system operable to control a voltage applied to the electrostatic chuck to thus control a contact heat transfer coefficient of the electrostatic chuck, wherein the heat transfer coefficient of the electrostatic chuck is primarily a function of a contact pressure between the substrate and the plurality of protrusions.

REFERENCES:
patent: 5583736 (1996-12-01), Anderson et al.
patent: 5810933 (1998-09-01), Mountsier et al.
patent: 5838529 (1998-11-01), Shufflebotham et al.
patent: 6033544 (2000-03-01), Demers et al.
patent: 6378600 (2002-04-01), Moslehi

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