Electricity: measuring and testing – Impedance – admittance or other quantities representative of... – Lumped type parameters
Reexamination Certificate
2006-04-19
2008-11-25
Nguyen, Vincent Q. (Department: 2831)
Electricity: measuring and testing
Impedance, admittance or other quantities representative of...
Lumped type parameters
C324S446000, C073S721000
Reexamination Certificate
active
07456638
ABSTRACT:
A MEMS-based silicon CTD sensor for ocean environment is presented. The sensor components are a capacitive conductivity sensor, a gold doped silicon temperature sensor, and a multiple diapghram piezoresistive pressure sensor. The sensor elements have further been packaged to protect them from harsh marine environment. The sensor components showed good linear response, resolution and mechanical integrity to the harsh ocean environment.
REFERENCES:
patent: 4238804 (1980-12-01), Warren
patent: 4646070 (1987-02-01), Yasuhara et al.
patent: 5446437 (1995-08-01), Bantien et al.
patent: 2004/0232923 (2004-11-01), Farruggia et al.
patent: 2005/0104607 (2005-05-01), Byington et al.
patent: 2005/0200056 (2005-09-01), Conti
patent: 2005/0274191 (2005-12-01), Hasegawa et al.
patent: 2006/0037390 (2006-02-01), Nakano et al.
patent: 2007/0018652 (2007-01-01), Broadbent et al.
Bhansali Shekhar
Bhat Shreyas
Langebrake Lawrence C.
McGaw Micahel M.
Nguyen Vincent Q.
Sauter Molly L.
Smith & Hopen , P.A.
University of South Florida
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